Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105155
Abstract: Abstract The high-quality growth of semiconducting single crystals is the basis of the fabrication of high-performance devices. SiC is a promising semiconductor material for fabricating power electronics and radio frequency devices that require crystals to… read more here.
Keywords: crystallization; defects sic; liquid interface; solid liquid ... See more keywords
Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing
Sign Up to like & getrecommendations! Published in 2025 at "Scientific Reports"
DOI: 10.1038/s41598-025-23259-6
Abstract: We present a novel approach for the optical activation of the negatively-charged silicon vacancy ( VSi−) center in ion irradiated silicon carbide (SiC) via ns-pulsed laser annealing in the 234–2180 mJ cm− 2 energy density range.… read more here.
Keywords: laser; defects sic; luminescent defects; laser annealing ... See more keywords
Surface defects in 4H-SiC：properties, characterizations and passivation schemes
Sign Up to like & getrecommendations! Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acd4df
Abstract: Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits excellent physical properties such as high electron saturated drift velocity, high breakdown field, etc. The SiC material contains many polytypes, among which 4H-SiC… read more here.
Keywords: carrier lifetime; surface defects; minority carrier; defects sic ... See more keywords
Oxygen-related defects in 4H-SiC from first principles
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DOI: 10.35848/1882-0786/ad45ae
Abstract: We investigated the abundance, structures, energy levels, and spin states of oxygen-related defects in 4H-SiC on the basis of first-principles calculations. We applied a hybrid functional in the overall calculations, which gives reliable defect properties,… read more here.
Keywords: defects sic; sic first; oxygen related; first principles ... See more keywords
Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Express"
DOI: 10.7567/apex.10.036601
Abstract: We study the correlation between crystal quality and electrical transport in 4H-SiC by micro-photoluminescence and laser-beam-induced photocurrent measurements. A focused HeCd laser at 325 nm has been employed to simultaneously measure, with a spatial resolution… read more here.
Keywords: investigated photoinduced; extended defects; defects sic; sic investigated ... See more keywords