Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105155
Abstract: Abstract The high-quality growth of semiconducting single crystals is the basis of the fabrication of high-performance devices. SiC is a promising semiconductor material for fabricating power electronics and radio frequency devices that require crystals to… read more here.
Keywords: crystallization; defects sic; liquid interface; solid liquid ... See more keywords
Surface defects in 4H-SiC：properties, characterizations and passivation schemes
Sign Up to like & getrecommendations! Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acd4df
Abstract: Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits excellent physical properties such as high electron saturated drift velocity, high breakdown field, etc. The SiC material contains many polytypes, among which 4H-SiC… read more here.
Keywords: carrier lifetime; surface defects; minority carrier; defects sic ... See more keywords
Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Express"
DOI: 10.7567/apex.10.036601
Abstract: We study the correlation between crystal quality and electrical transport in 4H-SiC by micro-photoluminescence and laser-beam-induced photocurrent measurements. A focused HeCd laser at 325 nm has been employed to simultaneously measure, with a spatial resolution… read more here.
Keywords: investigated photoinduced; extended defects; defects sic; sic investigated ... See more keywords