Finding unstrained 10 -nm lattice defects in silicon, given 1011 per cubic centimeter
Sign Up to like & getrecommendations! Published in 2017 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927617008157
Abstract: Our ability to image individual atoms and atom-columns only brings the practical problem of finding a statistically-useful number of nanoscale structures into sharper focus. In crystalline materials like metals and semiconductors, a key tool for… read more here.
Keywords: silicon given; lattice defects; unstrained lattice; defects silicon ... See more keywords
Magnetic-field-dependent spin properties of divacancy defects in silicon carbide.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d2nr06624f
Abstract: In recent years, spin defects in silicon carbide have become promising platforms for quantum sensing, quantum information processing and quantum networks. It has been shown that their spin coherence times can be dramatically extended with… read more here.
Keywords: coherence; defects silicon; spin properties; magnetic field ... See more keywords
A method for alleviating the effect of pinhole defects from silicon nitride film in n-type rear-junction PERT silicon solar cells
Sign Up to like & getrecommendations! Published in 2023 at "Advances in Natural Sciences: Nanoscience and Nanotechnology"
DOI: 10.1088/2043-6262/acd241
Abstract: We investigated incorporation of a novel approach of phosphorous silicate glass layer thinning (PGT) process in the N-PERT process flow to minimise pinhole defects at the silicon nitride (Si3N4) surface. The thinning (PGT) process for… read more here.
Keywords: silicon nitride; pert; pinhole defects; pgt process ... See more keywords