Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
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DOI: 10.1038/s41598-017-13191-9
Abstract: Deep-level defects in n-type GaAs1−xBix having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been… read more here.
Keywords: defects type; deep level; level; gaasbi ... See more keywords
Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation
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DOI: 10.1063/5.0226406
Abstract: Electrical properties of defects produced in strongly bismuth-doped silicon by 15 MeV protons are investigated in detail. Electrical measurements on irradiated samples by means of the van der Pauw technique are conducted over a wide temperature… read more here.
Keywords: irradiation; related defects; silicon; bismuth related ... See more keywords