Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy
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DOI: 10.1016/j.jcrysgro.2021.126250
Abstract: Abstract We present a pulsed reactive magnetron sputter process for high quality AlN on Si (1 1 1) beneficially avoiding any high-temperature growth. Initially, metallic aluminium with a nominal thickness of about one monolayer is deposited at… read more here.
Keywords: growth; microscopy; pulsed reactive; sputter ... See more keywords