AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer
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DOI: 10.1039/d4ce00191e
Abstract: The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of advanced materials in the next generation of power semiconductor and UV optoelectronic devices. Within this context, heterostructures based... read more here.
Keywords: reduction dislocation; aln interlayer; interlayer induced; density algan ... See more keywords