Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.06.012
Abstract: Abstract Dependence of carbon doping concentration on the strain-state and properties was studied in detail for the GaN on Si system. Combining the results of XRD and Raman spectra, it is found that compressive stress… read more here.
Keywords: carbon; carbon doping; dependence carbon; doping concentration ... See more keywords