Depth Dependence of Neutron-Induced Errors in 3-D NAND Floating Gate Cells
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DOI: 10.1109/tns.2023.3345011
Abstract: The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous at the center of the… read more here.
Keywords: dependence neutron; depth dependence; gate cells; floating gate ... See more keywords