Depth Dependence of Threshold Voltage Shift in 3-D Flash Memories Exposed to X-Rays
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DOI: 10.1109/tns.2020.3047710
Abstract: The effects of total ionizing dose on 3-D NAND floating gate cells with vertical architecture are analyzed as a function of the cell depth in the pillar. The focus of this work is on TID-induced… read more here.
Keywords: threshold voltage; voltage; dependence threshold; depth dependence ... See more keywords