Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress
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DOI: 10.1063/1.5109301
Abstract: We report an extensive analysis of the time-dependent breakdown of E-mode GaN-on-Si power HEMTs subjected to positive gate stress and demonstrate that TTF (time-to-failure) has a positive temperature dependence. The analyzed devices have a p-type… read more here.
Keywords: time; gate; time dependent; stress ... See more keywords