Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices
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DOI: 10.1109/tns.2017.2774960
Abstract: We present a new model for simulation of single-event effects in fully depleted silicon on insulator (FD-SOI) technology. The model is based on direct resolution of the drift-diffusion equations on a 1-D grid aligned with… read more here.
Keywords: resolution; accurate resolution; dependent circuit; circuit coupled ... See more keywords