Universal Theory and Basic Rules of Strain-Dependent Doping Behaviors in Semiconductors
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/38/8/087103
Abstract: Enhancing the dopability of semiconductors via strain engineering is critical to improving their functionalities, which is, however, largely hindered by the lack of basic rules. In this study, for the first time, we develop a… read more here.
Keywords: basic rules; theory basic; dependent doping; strain dependent ... See more keywords