Area-dependent electroforming and switching polarity reversal across TiO2/Nb:SrTiO3 oxide interfaces
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DOI: 10.1007/s10853-017-0882-3
Abstract: Vacancy-mediated transport drives the functionality of oxide-based nonvolatile memristive devices. Here, we report the size dependence of TiO2/Nb:STO heterojunctions for electroforming and the subsequent resistive switching process. Conductive AFM measurements suggest that the forming and… read more here.
Keywords: tio2; electroforming switching; dependent electroforming; polarity reversal ... See more keywords