Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells
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DOI: 10.1063/1.5131716
Abstract: The mechanism behind the quantum-well-width dependent Shockley-Read-Hall (SRH) recombination lifetime is investigated in the InGaN/GaN quantum wells (QWs). According to the literature, the strong dependence of SRH lifetime on QW width is proposed to originate… read more here.
Keywords: read hall; quantum; shockley read; dependent shockley ... See more keywords