A Composition-Dependent Unified Analytical Model for Quaternary InAlGaN/GaN HEMTs for pH Sensing
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DOI: 10.1007/s11664-021-08836-5
Abstract: Group III–V material alloys such as gallium nitride (GaN) with piezoelectric and pyroelectric properties are used for designing advanced devices suitable for harsh surroundings such as high temperature and acidic ambience. In the present paper,… read more here.
Keywords: inalgan gan; composition dependent; analytical model; dependent unified ... See more keywords