Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2
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DOI: 10.1109/ted.2017.2736163
Abstract: A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n–Ge contacts is possible with the formation of an interfacial TiOx layer… read more here.
Keywords: level depinning; via interfacial; interfacial reaction; geo2 ... See more keywords