Fermi level depinning in Ti/n-type Ge Schottky junction by the insertion of fluorinated graphene
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DOI: 10.1016/j.jallcom.2019.04.174
Abstract: Abstract The effect of fluorinated graphene (f-Gr) as the interfacial layer on Fermi level depinning in Ti/n-type Ge Schottky barrier diodes (SBDs) is intensively studied. Electrical properties of the SBDs are characterized by I-V method.… read more here.
Keywords: type schottky; level depinning; fermi level; fluorinated graphene ... See more keywords