Deep depletion concept for diamond MOSFET
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DOI: 10.1063/1.4997975
Abstract: A stable deep depletion regime is demonstrated in metal oxide semiconductor capacitors using p-type oxygen-terminated (100) diamond as a semiconductor and Al2O3 deposited by Atomic Layer Deposition at 380 °C. Current voltage I(V) and capacitance voltage… read more here.
Keywords: depletion; concept diamond; deep depletion; depletion concept ... See more keywords