Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Communications Technology and Electronics"
DOI: 10.1134/s1064226917030068
Abstract: Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been… read more here.
Keywords: heavily doped; photoelectric characteristics; focal plane; deposited heavily ... See more keywords