The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.150684
Abstract: Abstract The influence of growth temperature (200–300 ℃) on the properties of gallium nitride (GaN) directly deposited on Kapton by plasma-enhanced atomic layer deposition (PEALD) has been systematically investigated. With increasing growth temperatures, the O… read more here.
Keywords: growth; deposited kapton; gan; diffusion ... See more keywords