Temperature dependent current- and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique
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DOI: 10.1016/j.mssp.2020.105204
Abstract: Abstract In this study, tungsten disulfide (WS2) and tungsten trioxide (WO3) thin films are deposited on n-Si by RF sputtering technique. The optical, morphological and structural characteristics of these films are investigated. The XRD patterns… read more here.
Keywords: voltage; deposited sputtering; ws2 wo3; two dimensional ... See more keywords