High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor
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DOI: 10.1557/s43579-021-00067-3
Abstract: This study investigated a normally-off p-GaN/AlGaN/GaN high electron mobility transistor with the extended p-GaN. The optimized recess depth in the AlGaN barrier under the extended region of p-GaN provides improved device characteristics. The influences of… read more here.
Keywords: voltage; depth algan; algan barrier; barrier ... See more keywords