Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment
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DOI: 10.3390/nano13111740
Abstract: In this paper, the effect of atomic layer deposition (ALD)-derived Al2O3 passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er2O3 high-k gate dielectrics on Si substrate has been investigated.… read more here.
Keywords: chemistry; al2o3 passivation; derived al2o3; gate ... See more keywords