Design of a GaN-on-Si Single-Balanced Resistive Mixer for Ka-band Satcom
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2018.2880315
Abstract: Design and performance of a gallium nitride (GaN)-on-Si mixer for the Ka-band satellite telecom applications are presented in this letter. GaN-on-Si offers the advantage of high-volume production even for millimeter-wave applications. A single-balanced architecture is… read more here.
Keywords: single balanced; design gan; mixer band; mixer ... See more keywords
Design of 2D GaN photonic crystal based on hole displacement for L3 cavity
Sign Up to like & getrecommendations! Published in 2020 at "Nanomaterials and Nanotechnology"
DOI: 10.1177/1847980420966887
Abstract: In this article, we report modeling, simulation, and analysis of shifting 2D photonic crystal cavity side holes in GaN-AlN-sapphire layered structure. The design was simulated with Lumerical finite-difference time-domain. A lattice constant a, 157 nm,… read more here.
Keywords: gan photonic; photonic crystal; cavity; design gan ... See more keywords