Segregations and desorptions of Ge atoms in nanocomposite Si 1-x Ge x films during high-temperature annealing
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DOI: 10.1088/1674-1056/26/12/126801
Abstract: Nanocomposite Si1−x Ge x films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing,… read more here.
Keywords: segregations desorptions; desorptions atoms; temperature; high temperature ... See more keywords