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Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.01.044
Abstract: Abstract The memristor device based on graphene/Nb-doped SrTiO3 heterojunction was fabricated. The device exhibits obvious resistive switching between high resistance state and low resistance state. By using the graphene as the transparent electrode, remarkable photocurrent…
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Keywords:
using graphene;
destructive photovoltaic;
transparent electrode;
non destructive ... See more keywords