A comparative study of silicon detector degradation under irradiation by heavy ions and relativistic protons
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DOI: 10.1088/1748-0221/13/01/p01019
Abstract: Silicon detectors irradiated by 40Ar ions with the energy of 1.62 GeV were studied with the goal to find the parameters of radiation damage induced by ions. The measurements of the I–V characteristics, temperature dependences… read more here.
Keywords: silicon detector; irradiation; study silicon; detector degradation ... See more keywords