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Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.05.010
Abstract: Abstract We have grown by molecular-beam epitaxy (MBE) GaSb1−xBix layers at different temperatures and fluxes to observe their influence on the Bi incorporation rate. All growth runs were monitored by in situ reflection high-energy electron…
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Keywords:
situ determination;
growth conditions;
determination growth;
conditions gasbbi ... See more keywords