Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells
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DOI: 10.1016/j.solmat.2021.111325
Abstract: Abstract Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can… read more here.
Keywords: development arsenic; solar cells; cells development; arsenic doped ... See more keywords