Device behaviour and zero temperature coefficients analysis for microwave GaAs HEMT
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DOI: 10.1016/j.sse.2018.06.004
Abstract: Abstract Detailed analysis of device behaviour on the zero-temperature coefficient (ZTC) points for microwave GaAs based high-electron mobility transistor is presented by means of on-wafer measurements over the temperatures between −40 and 150 °C. This zero… read more here.
Keywords: device behaviour; temperature; behaviour zero; zero temperature ... See more keywords