Device to Circuit Framework for Activity-Dependent NBTI Aging in Digital Circuits
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2882229
Abstract: A framework is proposed for activity-dependent timing degradation due to p-FET negative bias temperature instability (NBTI) in digital circuits. A fixed-time compact model is proposed for NBTI and validated with physical model predictions for various… read more here.
Keywords: device circuit; activity dependent; activity; degradation ... See more keywords
Device, Circuit, and Reliability Assessment of Drain-Extended FinFETs for Sub-14 nm System on Chip Applications
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3020904
Abstract: This article explores the scope of drain-extended FinFET (DeFinFET) as a high-voltage (HV) device contender for Fin-based SoC applications. For the first time, guidelines for efficient and reliable HV integration in sub-14 nm FinFET nodes… read more here.
Keywords: drain; device circuit; circuit reliability; drain extended ... See more keywords