Articles with "device level" as a keyword



In-situ Device-level TEM Characterization Based on Ultra-flexible Multilayer MoS2 Micro-cantilever.

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Published in 2023 at "Advanced materials"

DOI: 10.1002/adma.202301439

Abstract: Current state-of-the-art in-situ TEM characterization technology has been capable of statically or dynamically nanorobotic manipulating specimens, affording abundant atom-level material attributes. However, an insurmountable barrier between material attributes investigations and device-level application explorations exists due… read more here.

Keywords: tem; situ device; characterization; device level ... See more keywords
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Inverse optimization investigation for thermoelectric material from device level

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Published in 2021 at "Energy Conversion and Management"

DOI: 10.1016/j.enconman.2020.113669

Abstract: Abstract Thermoelectric generators (TEGs) with improved conversion efficiency are in great need for low-grade heat recovery. Existing studies primarily optimize the dimensionless figure of merit (ZT) of thermoelectric (TE) materials to improve TEG efficiency. However,… read more here.

Keywords: inverse optimization; optimization investigation; optimization; performance ... See more keywords

A soft yet device-level dynamically super-tough supercapacitor enabled by an energy-dissipative dual-crosslinked hydrogel electrolyte

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Published in 2019 at "Nano Energy"

DOI: 10.1016/j.nanoen.2019.01.087

Abstract: Abstract Three challenges remain unsettled for current flexible energy storage devices. One is that most developed devices are not soft enough to conform various deformations; another is that they can hardly guarantee a stable energy… read more here.

Keywords: tough supercapacitor; device level; super tough; energy ... See more keywords

Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling

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Published in 2025 at "Applied Physics Letters"

DOI: 10.1063/5.0261673

Abstract: Self-heating and related degradation in performance and reliability are serious concerns in realizing higher output power density in microwave power amplifiers. We demonstrated the integration of polycrystalline diamond on a fully fabricated metal-polar Schottky-gated AlGaN/GaN… read more here.

Keywords: integration; device level; level cooling; device ... See more keywords

Adaptive Real-Time Hybrid Neural Network-Based Device-Level Modeling for DC Traction HIL Application

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Published in 2020 at "IEEE Access"

DOI: 10.1109/access.2020.2986298

Abstract: DC traction drive systems require high-frequency switching in the power converter whose device-level switching transients have a significant impact on the accuracy of hardware-in-the-loop emulation. Real-time device-level emulation has high computation demand for calculating the… read more here.

Keywords: tex math; inline formula; device level;

A 3-D Device-Level Investigation of a Lag-Free PPD Pixel With a Capacitive Deep Trench Isolation as Shared Vertical Transfer Gate

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Published in 2018 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2018.2863682

Abstract: The application of capacitive deep trench isolation (CDTI) as a shared vertical transfer gate (VTG) in a back-side-illuminated CMOS image sensor pixel is investigated using 3-D device-level simulations. The parasitic capacitance existence between CDTI and… read more here.

Keywords: cdti; transfer; device level; capacitive deep ... See more keywords

Investigating DFT and Device-Level Behavior in Doped Ferroelectric HfO 2 -Based HD-VS-FeFinFET With Self-Heating and Logic Circuit Perspectives

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Published in 2025 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2025.3634489

Abstract: In this work, a comprehensive investigation of ferroelectric hafnium oxide (HfO2)-based devices is presented, encompassing both material- and device-level analyses. At the device level, the impact of various doped ferroelectric materials on the transfer characteristics… read more here.

Keywords: device level; logic; sub; sub sub ... See more keywords
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Device-Level Parallel-in-Time Simulation of MMC-Based Energy System for Electric Vehicles

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Published in 2021 at "IEEE Transactions on Vehicular Technology"

DOI: 10.1109/tvt.2021.3081534

Abstract: The device-level electromagnetic transient (EMT) simulation with the nonlinear behaviour model (NBM) of insulated-gate bipolar transistors (IGBTs) and diodes can provide an accurate insight into the power converters from the perspective of thermal performance and… read more here.

Keywords: time; device level; level simulation; simulation ... See more keywords
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IGBT Dynamic Loss Reduction through Device Level Soft Switching

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Published in 2018 at "Energies"

DOI: 10.3390/en11051182

Abstract: Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications. However, its switching frequency is generally… read more here.

Keywords: igbt dynamic; loss reduction; soft switching; device level ... See more keywords