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Published in 2023 at "Advanced materials"
DOI: 10.1002/adma.202301439
Abstract: Current state-of-the-art in-situ TEM characterization technology has been capable of statically or dynamically nanorobotic manipulating specimens, affording abundant atom-level material attributes. However, an insurmountable barrier between material attributes investigations and device-level application explorations exists due…
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Keywords:
tem;
situ device;
characterization;
device level ... See more keywords
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1
Published in 2021 at "Energy Conversion and Management"
DOI: 10.1016/j.enconman.2020.113669
Abstract: Abstract Thermoelectric generators (TEGs) with improved conversion efficiency are in great need for low-grade heat recovery. Existing studies primarily optimize the dimensionless figure of merit (ZT) of thermoelectric (TE) materials to improve TEG efficiency. However,…
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Keywords:
inverse optimization;
optimization investigation;
optimization;
performance ... See more keywords
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Published in 2019 at "Nano Energy"
DOI: 10.1016/j.nanoen.2019.01.087
Abstract: Abstract Three challenges remain unsettled for current flexible energy storage devices. One is that most developed devices are not soft enough to conform various deformations; another is that they can hardly guarantee a stable energy…
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Keywords:
tough supercapacitor;
device level;
super tough;
energy ... See more keywords
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Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.2986298
Abstract: DC traction drive systems require high-frequency switching in the power converter whose device-level switching transients have a significant impact on the accuracy of hardware-in-the-loop emulation. Real-time device-level emulation has high computation demand for calculating the…
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Keywords:
tex math;
inline formula;
device level;
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1
Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2863682
Abstract: The application of capacitive deep trench isolation (CDTI) as a shared vertical transfer gate (VTG) in a back-side-illuminated CMOS image sensor pixel is investigated using 3-D device-level simulations. The parasitic capacitance existence between CDTI and…
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Keywords:
cdti;
transfer;
device level;
capacitive deep ... See more keywords
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Published in 2021 at "IEEE Transactions on Vehicular Technology"
DOI: 10.1109/tvt.2021.3081534
Abstract: The device-level electromagnetic transient (EMT) simulation with the nonlinear behaviour model (NBM) of insulated-gate bipolar transistors (IGBTs) and diodes can provide an accurate insight into the power converters from the perspective of thermal performance and…
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Keywords:
time;
device level;
level simulation;
simulation ... See more keywords
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Published in 2018 at "Energies"
DOI: 10.3390/en11051182
Abstract: Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications. However, its switching frequency is generally…
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Keywords:
igbt dynamic;
loss reduction;
soft switching;
device level ... See more keywords