Self-organized confinement in whole-device modeling of laboratory magnetospheres
Sign Up to like & getrecommendations! Published in 2021 at "Physics of Plasmas"
DOI: 10.1063/5.0063908
Abstract: Turbulent self-organization driven by global ideal interchange modes in a dipole-confined plasma is explored with self-consistent, whole-plasma simulations using a flux-tube averaged magnetohydrodynamic model in dipole magnetic geometry. We show the existence of robust particle… read more here.
Keywords: self organized; modeling laboratory; device modeling; whole device ... See more keywords
Multivariate rational regression and its application in semiconductor device modeling
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/39/9/094010
Abstract: Physics equation-based semiconductor device modeling is accurate but time and money consuming. The need for studying new material and devices is increasing so that there has to be an efficient and accurate device modeling method.… read more here.
Keywords: multivariate rational; mrr; device modeling; semiconductor device ... See more keywords
Holistic Device Modeling: Toward a Unified MOSFET Model Including Variability, Aging, and Extreme Operating Conditions
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems II: Express Briefs"
DOI: 10.1109/tcsii.2022.3171136
Abstract: This tutorial presents the holistic modeling concept in the context of metal-oxide-semiconductor field-effect-transistors (MOSFETs). First, the standard MOSFET modeling approaches will be comparatively discussed. Subsequently, several factors impacting the operation of MOSFETs will be explained… read more here.
Keywords: holistic device; modeling toward; toward unified; mosfet model ... See more keywords
Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3361410
Abstract: Large area PMOSFETs were characterized at room and cryogenic temperatures by admittance spectroscopy to determine transport parameters (e.g., hole mobility in the inversion layer). The devices were simulated in the linear response regime by an… read more here.
Keywords: cryogenic temperatures; spectroscopy; modeling admittance; spectroscopy pmosfets ... See more keywords
Device Modeling of Organic Photovoltaic Cells with Traditional and Inverted Cells Using s-SWCNT:C60 as Active Layer
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12162844
Abstract: This research work presents a thorough analysis of Traditional Organic Solar Cell (TOSC) and novel designed Inverted OSC (IOSC) using Bulk Hetero-Junction (BHJ) structure. Herein, 2D photovoltaic device models were used to observe the results… read more here.
Keywords: layer; device modeling; organic photovoltaic; active layer ... See more keywords