Extraction of device S-parameters within board by using a TRL de-embedding technique
Sign Up to like & getrecommendations! Published in 2018 at "Microwave and Optical Technology Letters"
DOI: 10.1002/mop.31473
Abstract: Semiconductor devices are tested within a complex environment including a loadboard and a socket. In this paper, we propose a calibration methodology and a RF de‐embedding technique that allows the extraction of the device parameters.… read more here.
Keywords: parameters within; embedding technique; device parameters; extraction device ... See more keywords
Impact of thermal annealing on internal device parameters of GaAs 0.965 Bi 0.035 /GaAs 0.75 P 0.25 quantum well lasers
Sign Up to like & getrecommendations! Published in 2019 at "IET Optoelectronics"
DOI: 10.1049/iet-opt.2018.5031
Abstract: The impact of post-growth thermal annealing on the internal device parameters such as internal loss ( α i ), internal differential quantum efficiency (η 0 d ) and modal material gain (Γ g 0J )… read more here.
Keywords: thermal annealing; device parameters; quantum well; internal device ... See more keywords