Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films
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DOI: 10.1016/j.mssp.2018.08.013
Abstract: Abstract We investigated the effects of hydrogen annealing temperature on Pt/HfOx/Pt resistive switching memory devices. Memory devices annealed in a hydrogen environment exhibited unipolar resistive switching behaviors with low set, reset, and forming voltages owing… read more here.
Keywords: effects hydrogen; devices annealed; hydrogen annealing; resistive switching ... See more keywords