Carbon nanowalls: A new material for resistive switching memory devices
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DOI: 10.1016/j.carbon.2017.05.004
Abstract: Abstract In this work, we report for the first time the resistive switching behavior of a new type of device made of carbon nanowalls (CNWs) deposited on fluorine-doped tin oxide (FTO) substrate. This new device… read more here.
Keywords: devices carbon; memory devices; carbon nanowalls; resistive switching ... See more keywords