ESD Behavior of Tunnel FET Devices
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DOI: 10.1109/ted.2016.2630079
Abstract: For the first time, we present the electrostatic discharge (ESD) behavior of grounded gate tunnel FET (ggTFET) with detailed physical insight into the device operation, 3-D filamentation and failure under ESD stress conditions. Current as… read more here.
Keywords: esd behavior; tunnel fet; devices esd; device ... See more keywords