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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2882652
Abstract: In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed to the complementary resistive switching…
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Keywords:
devices interconversion;
resistive switching;
interconversion bipolar;
bipolar complementary ... See more keywords