Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires
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DOI: 10.1016/j.sse.2018.08.001
Abstract: Abstract The impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principles calculations. Effective masses and band gaps are extracted… read more here.
Keywords: charge transport; transport; indium arsenide; diameter electronic ... See more keywords