Stability of diamond/Si bonding interface during device fabrication process
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DOI: 10.7567/1882-0786/aaeedd
Abstract: Diamond/Si bonding interface with an entire contact area and high thermal stability is achieved by surface activated bonding method. The fabrication of diamond field-effect transistors (FETs) on the diamond bonded to Si is demonstrated. The… read more here.
Keywords: interface; bonding interface; fabrication; diamond ... See more keywords