LAUSR

Diamond Diode Structures Based on Homoepitaxial Films

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0 Published in 2018 at "Journal of Communications Technology and Electronics"

DOI: 10.1134/s1064226918070148

Abstract: Abstract(m–i–p)-Structures with high-resistance epitaxial i-layers are fabricated on heavily doped p+-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (C–V and I–V characteristics) methods… read more here.

Keywords: structures based; homoepitaxial films; microscopy; diamond diode ... See more keywords