Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate
Sign Up to like & getrecommendations! Published in 2021 at "Carbon"
DOI: 10.1016/j.carbon.2021.01.121
Abstract: Abstract The normally-off Yttrium (Y) gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with 5 nm Al2O3 dielectric layer has been successfully fabricated and evaluated in this work. The threshold voltage is extracted to be -… read more here.
Keywords: hydrogen terminated; terminated diamond; yttrium gate; diamond field ... See more keywords
Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2989736
Abstract: Wereport on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe… read more here.
Keywords: field effect; effect transistors; diamond field; transfer doping ... See more keywords
Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15145082
Abstract: SnOx films were deposited on a hydrogen-terminated diamond by thermal oxidation of Sn. The X-ray photoelectron spectroscopy result implies partial oxidation of Sn film on the diamond surface. The leakage current and capacitance–voltage properties of… read more here.
Keywords: oxidation; hydrogen terminated; terminated diamond; thermal oxidation ... See more keywords