Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs
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DOI: 10.1007/s10854-019-00747-w
Abstract: This manuscript describes an experimental comparative study of effects of the total ionizing dose (TID) on the main electrical parameters and figures of merit of Metal–Oxide–Semiconductor Field Effect Transistors (MOSFETs) implemented with two different layout… read more here.
Keywords: gate; gamma rays; layout; diamond layout ... See more keywords