Atomic layer deposition of high-κ layers on polycrystalline diamond for MOS devices: a review
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DOI: 10.1039/d0tc02063j
Abstract: Changes in the expected performance of electronic devices have heavily influenced investigation into Si-substitute materials having the ability to meet these demands. Two examples are especially pertinent to the performance of metal oxide semiconductor (MOS)… read more here.
Keywords: mos devices; polycrystalline diamond; diamond mos; atomic layer ... See more keywords