Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate
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DOI: 10.3390/ma15072557
Abstract: In this work, hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a heteroepitaxial diamond substrate with an Al2O3 dielectric and a passivation layer were characterized. The full-width at half maximum value of the diamond (004) X-ray… read more here.
Keywords: diamond substrate; characteristics diamond; heteroepitaxial diamond; electrical characteristics ... See more keywords