Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs
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DOI: 10.1109/led.2023.3265664
Abstract: In this letter, we report the constant gate bias stress characteristics of an Al2O3 layer passivated, NO2 p-type doped diamond metal-oxide-semiconductor field-effect transistor (MOSFET) for a long period of 190 h. The MOSFET exhibited stable… read more here.
Keywords: doped diamond; no2 type; diamond mosfets; type doped ... See more keywords