Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2016.2628967
Abstract: This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics of highly-scaled tri-gate n-MOSFETs with InGaAs channel based on ITRS 2021 technology node through numerical simulation corroborated with theoretical calculation. This paper indicates that, when… read more here.
Keywords: tri gate; gate; sensitivity; dibl characteristics ... See more keywords