Tungsten dichalcogenide WS2xSe2-2x films via single source precursor low-pressure CVD and their (thermo-)electric properties
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DOI: 10.1039/d3ta00466j
Abstract: Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS2xSe2-2x (0... read more here.
Keywords: dichalcogenide ws2xse2; tungsten dichalcogenide; single source; ws2xse2 films ... See more keywords