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Published in 2024 at "ACS Nano"
DOI: 10.1021/acsnano.3c11025
Abstract: The electronic properties of 2D materials are highly influenced by the molecular activity at their interfaces. A method was proposed to address this issue by employing passivation techniques using monolayer MoS2 field-effect transistors (FETs) while…
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Keywords:
capping layers;
spectroscopy;
field effect;
dielectric capping ... See more keywords