Enhanced performances of AlGaN/GaN HEMTs with dielectric engineering of HfZrOx
Sign Up to like & getrecommendations! Published in 2020 at "Nano Energy"
DOI: 10.1016/j.nanoen.2019.104361
Abstract: Abstract III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent candidates for high-power, radio-frequency (rf) and high-temperature applications. However, HEMTs have to face the essential issues of high gate leakage current and drain current collapse… read more here.
Keywords: dielectric engineering; algan gan; gate; mos hemt ... See more keywords
Performance enhancement of core-shell JLFET by gate/dielectric engineering
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Electronics"
DOI: 10.1080/00207217.2019.1692249
Abstract: ABSTRACT In this paper, enhancement of volume depletion is studied on P-type double gate junctionless Field Effect Transistor (P-DGJLFET) by Gate work function and Gate dielectric engineering. The formation of parasitic BJT action in junctionless… read more here.
Keywords: core shell; gate; gate dielectric; dielectric engineering ... See more keywords
Dielectric Engineering With the Environment Material in 2-D Semiconductor Devices
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2803161
Abstract: A theoretical study that highlights the dielectric constant modulation effect of the surrounding environment material (EM) on 2-D semiconductor devices is presented. With graphene nanoribbon as the vehicle, it is shown that the dielectric constant… read more here.
Keywords: semiconductor devices; material; dielectric constant; dielectric engineering ... See more keywords