Performances analysis of InP/InGaAs heterojunction bipolaire phototransistor for different base thicknesses
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DOI: 10.1007/s11082-021-03077-6
Abstract: The NPN InP/InGaAs heterojunction phototransistor (HPT) is numerically simulated with a two dimensional model based on a finite difference method. The electrical and optical characteristics of HPT are analyzed with different base thickness and compared… read more here.
Keywords: base; inp ingaas; ingaas heterojunction; different base ... See more keywords